Michikoshi, Hisato: search on Z-Library

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1

V-groove trench gate SiC MOSFET with a double reduced surface field junction termination extensions structure

Saitoh, Yu, Masuda, Takeyoshi, Michikoshi, Hisato, Shiomi, Hiromu, Harada, Shinsuke, Mikamura, Yasuki

Journal:

Japanese Journal of Applied Physics

Year:

2019

Language:

english

File:

PDF, 1.93 MB

english, 2019

2

Comparative Study of Developed 1200V/50A Full SiC IEMOS and VMOS Power Module

Hayashi, Kei, Funaki, Tsuyoshi, Michikoshi, Hisato, Fukuda, Kenji

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 373 KB

english, 2019

3

Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

Okamura, Katsuya, Naito, Fujio, Takayama, Ken, Kitai, Hidenori, Michikoshi, Hisato, Sakamoto, Kunihiro, Tokuchi, Akira, Kaito, Tatsuya, Kumamoto, Daiki

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 2.45 MB

2020

4

1MHz Switching Operation of 1200V Full SiC Power Module

Hayashi, Kei, Funaki, Tsuyoshi, Michikoshi, Hisato, Fukuda, Kenji

Journal:

Materials Science Forum

Year:

2018

Language:

english

File:

PDF, 5.09 MB

english, 2018

5

[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018-ECCE Asia) - Niigata (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - A New Type of Wireless V2X System with a Dual-Active Bidirectional Single-Ended Converter and Optimized SiC-MOSFET

Omori, Hideki, Yamamoto, Aoto, Mukaiyama, Naoki, Tsuno, Masahito, Fukuda, Kenji, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu

Year:

2018

File:

PDF, 7.44 MB

2018

6

Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules

Wada, Keiji, Tamaso, Hideto, Itoh, Satomi, Kanbara, Kenji, Hiyoshi, Toru, Toyoshima, Shigenori, Genba, Jun, Tokuda, Hitoki, Sugimura, Takahiro, Michikoshi, Hisato, Tsuno, Takashi, Mikamura, Yasuki

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.10 MB

english, 2015

7

[IEEE 2016 IEEE International Power Electronics and Motion Control Conference (PEMC) - Varna, Bulgaria (2016.9.25-2016.9.28)] 2016 IEEE International Power Electronics and Motion Control Conference (PEMC) - Comparative study of IGBT and SiC-MOSFET in a wireless V2H system with a new bidirectional single-ended ZVS converter

Ohara, Shinya, Fukuda, Kenji, Omori, Hideki, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu, Nakaoka, Mutuo

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

8

Novel Designed SiC Devices for High Power and High Efficiency Systems

Mikamura, Yasuki, Hiratsuka, Kenji, Tsuno, Takashi, Michikoshi, Hisato, Tanaka, So, Masuda, Takeyoshi, Wada, Keiji, Horii, Taku, Genba, Jun, Hiyoshi, Toru, Sekiguchi, Takeshi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.68 MB

english, 2015

9

[IEEE 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Paris, France (2018.10.14-2018.10.17)] 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - A 3kW Single-Ended Wireless EV Charger with a Newly Developed SiC-VMOSFET

Maeno, Ryota, Omori, Hideki, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu

Year:

2018

Language:

english

File:

PDF, 616 KB

english, 2018

10

[IEEE 2017 19th International Conference on Electrical Drives and Power Electronics (EDPE) - Dubrovnik (2017.10.4-2017.10.6)] 2017 19th International Conference on Electrical Drives and Power Electronics (EDPE) - Optimum design of a new single-ended wireless EV charger and comparative thermal evaluation of SiC-MOSFET and Si-IGBT

Yamamoto, Aoto, Omori, Hideki, Fukuda, Kenji, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu, Nakaoka, Mutsuo

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

11

[IEEE 2017 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) - Chongqing, China (2017.5.20-2017.5.22)] 2017 IEEE PELS Workshop on Emerging Technologies: Wireless Power Transfer (WoW) - Loss/resistance evaluation of SiC-MOSFET and Si-IGBT in a novel type of single-ended wireless V2H

Murakami, Aoi, Omori, Hideki, Ohara, Shinya, Fukuda, Kenji, Michikoshi, Hisato, Kimura, Noriyuki, Morizane, Toshimitsu, Nakaoka, Mutsuo

Year:

2017

Language:

english

File:

PDF, 1.45 MB

english, 2017

12

Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

Masuda, Takeyoshi, Saito, Yu, Hatayama, Tomoaki, Michikoshi, Hisato, Mikamura, Yasuki, Harada, Shinsuke

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 1.81 MB

2020

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